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Thermal activation energy for the passivation of the -type crystalline silicon surface by hydrogenated amorphous silicon
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10.1063/1.3120765
/content/aip/journal/apl/94/16/10.1063/1.3120765
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3120765
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured annealing time dependence of the for 25 nm thick films, for three different annealing temperatures. The results indicate that the reaction rate for surface passivation increases with higher temperature. Fitted lines are shown.

Image of FIG. 2.
FIG. 2.

Improvements in from post-deposition thermal annealing for three different thicknesses of as-deposited . Sigmoidal fits and reaction rate (in minutes) for each thickness are shown.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of reaction rate showing the fit for determining the activation energy of this process. A 25 nm layer deposited onto a wafer is shown. Fitted line according to Eq. (2).

Image of FIG. 4.
FIG. 4.

Calculated thermal surface passivation activation energies for different layer thicknesses. Dotted line indicates the average value for across all thicknesses.

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/content/aip/journal/apl/94/16/10.1063/1.3120765
2009-04-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3120765
10.1063/1.3120765
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