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Measured annealing time dependence of the for 25 nm thick films, for three different annealing temperatures. The results indicate that the reaction rate for surface passivation increases with higher temperature. Fitted lines are shown.
Improvements in from post-deposition thermal annealing for three different thicknesses of as-deposited . Sigmoidal fits and reaction rate (in minutes) for each thickness are shown.
Arrhenius plot of reaction rate showing the fit for determining the activation energy of this process. A 25 nm layer deposited onto a wafer is shown. Fitted line according to Eq. (2).
Calculated thermal surface passivation activation energies for different layer thicknesses. Dotted line indicates the average value for across all thicknesses.
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