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Stress field analysis to understand the breakdown characteristics of stacked high- dielectrics
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10.1063/1.3122924
/content/aip/journal/apl/94/16/10.1063/1.3122924
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3122924
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Regions separated by the electric field applied to the high- dielectric and interfacial layer. Line A represents the borderline for the oxide layer breakdown and line B represents the borderline for the high- dielectric layer breakdown at a given bias . Region 1, both the high- layer and interfacial layers are under the intrinsic breakdown field. Region 2, interfacial layers are subject to the breakdown field. Region 3, both layers are subject to the breakdown field.

Image of FIG. 2.
FIG. 2.

Cumulative breakdown voltage curves of capacitors with 4 nm and 0.6, 0.9, and 1.9 nm interfacial -like interfacial layers.

Image of FIG. 3.
FIG. 3.

Thickness map showing the sample structures classified by region as defined in Fig. 1. Numbers in brackets refer to the references used in this paper.

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/content/aip/journal/apl/94/16/10.1063/1.3122924
2009-04-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3122924
10.1063/1.3122924
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