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Effect of thermal annealing on charge exchange between oxygen interstitial defects within and oxygen-deficient silicon centers within the interface
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10.1063/1.3122925
/content/aip/journal/apl/94/16/10.1063/1.3122925
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3122925
/content/aip/journal/apl/94/16/10.1063/1.3122925
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/content/aip/journal/apl/94/16/10.1063/1.3122925
2009-04-24
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3122925
10.1063/1.3122925
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