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Average surface potential on 4 nm of and RTA at RT, 800 and as a function of total photon dose of 11.6 eV photons.
(a) Normalized substrate current during the irradiation of 4 nm of annealed at RT, 800, and as a function of photon energy. (b) Normalized substrate current for three consecutive scans at the same location of the surface of a 4 nm layer which was rapid thermally annealed at .
Comparison of normalized substrate current between 4 nm of (top curves) and 250 nm of (bottom curve) with the band-gap edges shifted in energy with respect to Si.
Simplified electron band diagrams for the bottom half of the band-gap of at the interface between a layer and a IL with (a) or in the layer and (b) within the layer (not to scale).
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