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Effect of thermal annealing on charge exchange between oxygen interstitial defects within and oxygen-deficient silicon centers within the interface
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10.1063/1.3122925
/content/aip/journal/apl/94/16/10.1063/1.3122925
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3122925
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Average surface potential on 4 nm of and RTA at RT, 800 and as a function of total photon dose of 11.6 eV photons.

Image of FIG. 2.
FIG. 2.

(a) Normalized substrate current during the irradiation of 4 nm of annealed at RT, 800, and as a function of photon energy. (b) Normalized substrate current for three consecutive scans at the same location of the surface of a 4 nm layer which was rapid thermally annealed at .

Image of FIG. 3.
FIG. 3.

Comparison of normalized substrate current between 4 nm of (top curves) and 250 nm of (bottom curve) with the band-gap edges shifted in energy with respect to Si.

Image of FIG. 4.
FIG. 4.

Simplified electron band diagrams for the bottom half of the band-gap of at the interface between a layer and a IL with (a) or in the layer and (b) within the layer (not to scale).

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/content/aip/journal/apl/94/16/10.1063/1.3122925
2009-04-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3122925
10.1063/1.3122925
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