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(a) Schematic illustration of the preparation of Ag–Ge–Se MEM samples experienced EFIPR. (b) characteristic of the MEM structure shown in (a) as a function of the time of electrical field treatment.
Microstructural evolution of the Ag–Ge–Se film before and during an electrical field treatment. (a) TEM micrograph of an as-deposited Ag–Ge–Se film. Corresponding electron diffraction pattern is in the inset. (b) Sample treated in electrical field for 3 min, showing that the precipitates appeared and are already crystalline. [(c)–(d)] Sample treated for 60 and 180 min, respectively. Growth of the precipitates is evident. (e) Sample treated for 480 min, the precipitates tend to align themselves in a network. (f) In some area of the sample treated for 480 min, networks composed of the precipitates can be clearly observed, an electron diffraction pattern from the precipitated phase is shown in the inset.
HRTEM pictures and corresponding FFT patterns from different precipitates in the sample treated for 480 min. [(a)–(c)] Lattice images of selected (0 2 −1), (1 0 −1) and (1 1 −3)-oriented grains, in which some lattice constants calculated from FFT spots are indicated. [(d)–(f)] FFT patterns from the grains shown in [(a)–(c)], from which the corresponding lattice constants were estimated.
The comparison of the lattice constants calculated from the electron diffraction data shown in the inset of Fig. 2(f) and the corresponding standard lattice constants. The standard lattice constant values are from 1999 JCPDS-International Centre for Diffraction Data.
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