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Ultradense phosphorus in germanium delta-doped layers
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10.1063/1.3123391
/content/aip/journal/apl/94/16/10.1063/1.3123391
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3123391
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams and corresponding STM images of the UHV fabrication process for a Ge:P -doped layer. See text for details.

Image of FIG. 2.
FIG. 2.

(a) depth profile of the Ge:P -doped layer determined by SIMS and (b) TEM micrograph of the same -layer, with arrows marking the expected interface between substrate and epilayer.

Image of FIG. 3.
FIG. 3.

(a) Hall resistance and (b) magnetoconductance (experimental and WL theoretical fits) of the Ge:P -doped layer as a function of perpendicular magnetic field measured at .

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/content/aip/journal/apl/94/16/10.1063/1.3123391
2009-04-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultradense phosphorus in germanium delta-doped layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3123391
10.1063/1.3123391
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