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Ultradense phosphorus in germanium delta-doped layers
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9.Throughout the whole Hall bar fabrication process the temperature was kept below in order to minimize P diffusion.
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12.This estimate matches that can be calculated from the simple scaling formula , valid in the limit of an homogenous semiconductor with same mean distance between atoms and for an ideal -distribution of dopants.
15.G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons (unpublished).
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