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Enhancement of the magnetic field sensitivity in encapsulated NiFe films with anisotropic magnetoresistance
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10.1063/1.3123807
/content/aip/journal/apl/94/16/10.1063/1.3123807
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3123807
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Figures

Image of FIG. 1.
FIG. 1.

(a) value vs annealing temperature for the and Ta 5 nm/NiFe 10 nm/Ta 5 nm films. (b) curves for the and Ta 5 nm/NiFe 10 nm/Ta 5 nm films before and after annealing at . (c) value vs the NiFe thickness for the and Ta 5 nm/NiFe nm/Ta 5 nm films before and after annealing at . (d) value vs the NiFe thickness for the and Ta 5 nm/NiFe nm/Ta 5 nm films annealed at . .

Image of FIG. 2.
FIG. 2.

XRD patterns of (a) and (b) Ta 5 nm/NiFe 10 nm/Ta 5 nm films as a function of annealing temperature.

Image of FIG. 3.
FIG. 3.

Cross-section HRTEM images of [(a) and (b)] Ta 5 nm/NiFe 10 nm/Ta 5 nm and [(c) and (d)] films. (a) and (c) for as-deposited films and (b) and (d) for annealed films.

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/content/aip/journal/apl/94/16/10.1063/1.3123807
2009-04-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of the magnetic field sensitivity in Al2O3 encapsulated NiFe films with anisotropic magnetoresistance
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3123807
10.1063/1.3123807
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