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Effect of In–Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes
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10.1063/1.3123816
/content/aip/journal/apl/94/16/10.1063/1.3123816
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3123816
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of InAs QDs grown at (a) and (b). (c) Dependence of the pinch-off gate voltage of the QD-SETs on the QD diameter for (closed circles) and (open circles). The inset shows an SEM image of the fabricated sample. The dashed line is a guide for the eye.

Image of FIG. 2.
FIG. 2.

(a) Coulomb stability diagram obtained by measurements at 4.3 K for QDs grown at . The number of electrons in each Coulomb diamond is also shown. (b) Addition energy as a function of for two QD-SETs: , (closed circles) and , (open circles).

Image of FIG. 3.
FIG. 3.

Dependence of the orbital quantization energy difference between - and -orbitals on the QD diameter for (closed circles) and (open circles). The solid line shows the function, where is a fitting parameter . The dashed line represents the function. The insets show schematic illustrations of the sample geometries and electron wave functions in the QDs for and .

Image of FIG. 4.
FIG. 4.

(a) Coulomb stability diagram obtained by measurements at 4.3 K for a QD-SET of grown at . The electron number in each Coulomb diamond is also shown. The inset shows an enlarged image of the Coulomb diamond. (b) QD-diameter dependence of the conductance of the first Coulomb peak for (closed circles) and (open circles). (c) Differential conductance as a function of at .

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/content/aip/journal/apl/94/16/10.1063/1.3123816
2009-04-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of In–Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3123816
10.1063/1.3123816
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