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The EFM images of the PZT thin film after switching ferroelectric polarization bits with writing bias voltages of ±10 V. The reversal of the EFM signals was observed within (a) several microseconds for the writing bias voltage of 10 V and (b) several milliseconds for the writing bias voltage of −10 V.
The surface potential as a function of writing time for the ferroelectric polarization bits with (a) negative (−3, −5, and −10 V) and (b) positive (3, 5, and 10 V) writing bias voltages.
The schematic drawing of switching ferroelectric domains by an EFM tip. (a) Two oppositively polarized domains with different surface charges for positive and negative tip biases. (b) The EFM surface potential reversal by screening of the polarization charges by the surface charges (electrons for a negative tip bias).
The size of the ferroelectric polarization bit as a function of writing time.
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