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Stimulated terahertz emission due to electronic Raman scattering in silicon
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10.1063/1.3119662
/content/aip/journal/apl/94/17/10.1063/1.3119662
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/17/10.1063/1.3119662
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The two upper panels show the lasing mechanism for the Raman laser (left, arrow down) and the combined donor (LF, arrow down) and Raman laser; LF and HF indicate the low-frequency and high-frequency contributions in the laser emission spectrum (b). C. B. designates the conduction band. Two lower graphs show typical Raman laser spectra and pulse dynamics (insets) at maximal pump power and different pump photon energies: (a) pure Raman lasing; with a FWHM . The Raman laser pulse has a delay relative to the pump macropulse. Pumping is in between the and excited states. (b) Combined Raman and donor lasing: the donor lasing develops faster and has a shorter delay relative to the pump macropulse. Pumping is in vicinity of the state.

Image of FIG. 2.
FIG. 2.

Dependences of the Si:As laser emission on the photon number per FEL macropulse. The laser intensity value is integral over entire pulse duration. The stars indicate Raman lines. The pump photon energies are given in the upper left corner. A sketch of the experimental setup is shown in the lower right corner.

Image of FIG. 3.
FIG. 3.

Overview of the frequency band generated in optically pumped Si:As. (a) FEL pump spectrum at maximal power (upper graph, low resolution scan). The laser intensity value is integral over last (gate is set to as in Fig. 1) of the emission pulse. The dip between 43.5 and 44.5 meV is due to strong waver vapor absorption. The Si:As emission spectrum (lower graph) shows a correlation between maximum output intensity and the energy of the donor states. (b) Frequency bands covered by Raman and donor Si:As laser schemes. The Stokes shift in the Raman emission is 22.44 meV. The error bar shows the FWHM of the laser lines.

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/content/aip/journal/apl/94/17/10.1063/1.3119662
2009-04-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stimulated terahertz emission due to electronic Raman scattering in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/17/10.1063/1.3119662
10.1063/1.3119662
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