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(a) Cross-sectional view SEM image of vertically aligned Si NWs at large areas. (b) TEM image of an individual Si NW epitaxially grown on a Si (111) substrate. Inset is a high-resolution TEM image of the white box area. The interface between the NW and the substrate is indicated by a dotted line. (c) Top view SEM image of Si NWs grown on a Si (111) substrate. The inset shows that the sidewalls of NWs are (112) faceted with hexagonal shapes in the radial directions and periodic sawtooth shapes along the axial direction. (d) Cross-sectional view SEM image of P-doped Si NWs. (e) Cross-sectional view SEM image of Si intra-NW diodes. The dotted line indicates the location of the junctions.
characteristics of an individual Si NW diode. The upper inset is the SEM image of the individual Si NW diode. The lower left inset shows the data at the low bias regime with a diode model fit. The lower right inset shows temperature-dependent characteristics of the individual Si NW diode.
(a) EFM measurement setup. (b) AFM image of the individual Si NW diode (c) EFM image at forward bias (10 V) applying at -type region. (d) EFM image at reverse bias (−10 V) applying at -type region. (e) EFM phase shift data along the dotted lines in the upper EFM images.
characteristics of the vertically aligned, intra-NW diodes and the monolithic -type Si NW bundle, measured using cs-AFM tips. The low inset shows the schematic of the measurements. The relative size and the density of NWs are not scaled with respect to the tips for clarity.
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