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Delta-doped interfaces
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10.1063/1.3126445
/content/aip/journal/apl/94/17/10.1063/1.3126445
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/17/10.1063/1.3126445
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The different sample structures used in these experiments: (i) reference STO (substrate)/LAO q2DEG; (ii) a homoepitaxial STO layer is inserted between the STO substrate and the LAO; and (iii) a 2% doped-STO layer is inserted between the STO substrate and the LAO.

Image of FIG. 2.
FIG. 2.

Evolution of the resistance per square vs temperature for (a) samples, (b) , and samples.

Image of FIG. 3.
FIG. 3.

Evolution of the sheet carrier density and mobility at 200 K as a function of the number of inserted unit cells at the interface for and samples.

Image of FIG. 4.
FIG. 4.

AHE measured at 10 K as a function of the magnetic field for a Co–STO (1 uc)/LAO (15 uc) sample; the slope of the ordinary Hall effect has been subtracted.

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/content/aip/journal/apl/94/17/10.1063/1.3126445
2009-04-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Delta-doped LaAlO3/SrTiO3 interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/17/10.1063/1.3126445
10.1063/1.3126445
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