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The different sample structures used in these experiments: (i) reference STO (substrate)/LAO q2DEG; (ii) a homoepitaxial STO layer is inserted between the STO substrate and the LAO; and (iii) a 2% doped-STO layer is inserted between the STO substrate and the LAO.
Evolution of the resistance per square vs temperature for (a) samples, (b) , and samples.
Evolution of the sheet carrier density and mobility at 200 K as a function of the number of inserted unit cells at the interface for and samples.
AHE measured at 10 K as a function of the magnetic field for a Co–STO (1 uc)/LAO (15 uc) sample; the slope of the ordinary Hall effect has been subtracted.
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