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Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
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10.1063/1.3116624
/content/aip/journal/apl/94/18/10.1063/1.3116624
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/18/10.1063/1.3116624
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) atomic ratio and thickness as a function of Ge nitridation temperature. (b) TEM image of stack on Ge (100) substrate. (c) Ge (ex situ) XPS spectra of Ge (100) nitrided at .

Image of FIG. 2.
FIG. 2.

(a) of stacks in the upper half of band gap before and after forming gas anneal at and (b) gate leakage current at −1 V vs CET.

Image of FIG. 3.
FIG. 3.

SRPES spectra of stack on Ge (100) with the grown at different temperatures before/after FGA at for 30 min. (inset) atomic ratio and relative concentration of Ge diffused into the layer as a function of Ge nitridation temperature.

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/content/aip/journal/apl/94/18/10.1063/1.3116624
2009-05-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/18/10.1063/1.3116624
10.1063/1.3116624
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