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Dark and illuminated characteristics of ITO/CuPc (40 nm)/BPhen (8 nm)/Al (150 nm) OPV device at 300 K. Inset shows the variation of and with the illumination intensities.
Illuminated characteristics of the device under study, at different temperatures and .
Dark and illuminated characteristics of the sample under study, measured at (a) 270 K and (b) 230 K. Different curves show the characteristics at different illumination intensities. The initial illuminated intensity of the sample was maintained at .
Distribution of potential and electron density at different temperatures in a semiconductor with ohmic contact at the cathode. The values of the parameters used in these calculations are , , , , and .
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