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SEM tilt-view images of the as-synthesized GaN nanowires of (a) trapezoid and (b) triangular shape.
(a) HRTEM image of a typical trapezoid defected GaN nanowire. (b) DP along containing twinned cubic (◻ and ◇) and hexagonal (○) phases with the inset showing the corresponding TEM image. (c) Inverse Fourier transform from (0002) component showing dislocations.
curve of the GaN nanowire, as shown in Fig. 2 measured by C-AFM, with the inset showing the layout of measurement. represents the defect level from complex defects and is from stacking faults.
Energy band diagram for (a) trap-assisted inelastic tunneling process for positive bias and (b) thermionic-emission process for negative bias.
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