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Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate
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10.1063/1.3132054
/content/aip/journal/apl/94/18/10.1063/1.3132054
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/18/10.1063/1.3132054
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-section views of the SK mode of thin film growth. (a) Under critical thickness, the film is grown layer-by-layer. (b) At critical thickness, the planar layer under stress is unstable and 3D islands eventually form. (c) The deposition growth then transits into a 3D island growth mode.

Image of FIG. 2.
FIG. 2.

Strain energy distribution over the depositing surface.

Image of FIG. 3.
FIG. 3.

The displacement of Ga(Sb) atoms in GaSb QD from the initial GaAs crystal lattice frame after optimization. [(a)–(c)] show seeds made up of 81 Ga atoms while [(d)–(f)] show seeds made up of 81 Sb atoms. (a) and (d) show the square whose boundary is along and [110]. (b) and (e) show the square whose boundary is along [100] and [010]. (c) and (f) show the cycle.

Image of FIG. 4.
FIG. 4.

Local surface contour.

Image of FIG. 5.
FIG. 5.

Height profile of QR in Fig. 4(b) . The axis is marked as a black arrow in Fig. 4(b) .

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/content/aip/journal/apl/94/18/10.1063/1.3132054
2009-05-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/18/10.1063/1.3132054
10.1063/1.3132054
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