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Cross-section views of the SK mode of thin film growth. (a) Under critical thickness, the film is grown layer-by-layer. (b) At critical thickness, the planar layer under stress is unstable and 3D islands eventually form. (c) The deposition growth then transits into a 3D island growth mode.
Strain energy distribution over the depositing surface.
The displacement of Ga(Sb) atoms in GaSb QD from the initial GaAs crystal lattice frame after optimization. [(a)–(c)] show seeds made up of 81 Ga atoms while [(d)–(f)] show seeds made up of 81 Sb atoms. (a) and (d) show the square whose boundary is along and . (b) and (e) show the square whose boundary is along  and . (c) and (f) show the cycle.
Local surface contour.
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