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Study of the effect of dielectric porosity on the stress in advanced Cu/low- interconnects using x-ray diffraction
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10.1063/1.3133345
/content/aip/journal/apl/94/18/10.1063/1.3133345
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/18/10.1063/1.3133345
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diffraction geometries: (a) GIXRD, showing the sample from top view; (b) , showing the sample in cross-section; and (c) the line coordinate system.

Image of FIG. 2.
FIG. 2.

-plot for blanket wafers processed with different metallization thermal treatments, showing (a) measurements made on available [311] planes, and (b) a fit of the strain-free atomic spacing.

Image of FIG. 3.
FIG. 3.

Stress as a function of dielectric porosity for 90 and 500 nm line widths.

Image of FIG. 4.
FIG. 4.

Normalized change in hydrostatic stress for 90 nm lines integrated in different dielectrics. The inserts show examples of the low- and air gap stack.

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/content/aip/journal/apl/94/18/10.1063/1.3133345
2009-05-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the effect of dielectric porosity on the stress in advanced Cu/low-k interconnects using x-ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/18/10.1063/1.3133345
10.1063/1.3133345
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