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(a) A schematic diagram of a line-type PRAM cell. (b) SEM image of GST after patterning by dry etch. The width and length of the bridge are 100 and 130 nm, respectively.
(a) Resistance-current characteristics of sample A. The resistance is measured after applying each current pulse of 200 ns duration. (b) Cycling endurance characteristics of the same cell. Around of programming cycles, the resistance increases over , while the current goes near zero, indicating the open circuit failure at .
(a) Cross-sectional TEM image of sample A after breakdown. The sample was cut near the bridge along -axis in Fig. 1. (b) EDS line profile along the line A-B. Positive bias was applied to the left side for the switching of the cell.
(a) Cross-sectional TEM image of sample B. (b) EDS line profile along the line A-B. For clarity, the intensity of Sb is doubled.
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