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Direct evidence of phase separation in in phase change memory devices
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10.1063/1.3127223
/content/aip/journal/apl/94/19/10.1063/1.3127223
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3127223
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic diagram of a line-type PRAM cell. (b) SEM image of GST after patterning by dry etch. The width and length of the bridge are 100 and 130 nm, respectively.

Image of FIG. 2.
FIG. 2.

(a) Resistance-current characteristics of sample A. The resistance is measured after applying each current pulse of 200 ns duration. (b) Cycling endurance characteristics of the same cell. Around of programming cycles, the resistance increases over , while the current goes near zero, indicating the open circuit failure at .

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional TEM image of sample A after breakdown. The sample was cut near the bridge along -axis in Fig. 1. (b) EDS line profile along the line A-B. Positive bias was applied to the left side for the switching of the cell.

Image of FIG. 4.
FIG. 4.

(a) Cross-sectional TEM image of sample B. (b) EDS line profile along the line A-B. For clarity, the intensity of Sb is doubled.

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/content/aip/journal/apl/94/19/10.1063/1.3127223
2009-05-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3127223
10.1063/1.3127223
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