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Backside observation of large-scale integrated circuits with multilayered interconnections using laser terahertz emission microscope
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10.1063/1.3133346
/content/aip/journal/apl/94/19/10.1063/1.3133346
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3133346
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross section of an LSI chip with multilevel interconnection lines.

Image of FIG. 2.
FIG. 2.

Experimental setup of the near-infrared LTEM for backside observation of LSI chips.

Image of FIG. 3.
FIG. 3.

(a) Laser reflection image and (b) terahertz emission image of an LSI chip with multilayered interconnections. The size of image in (a) and (b) is approximately with . (c) The waveforms of terahertz emission from areas A and B in (d) the magnified terahertz emission image of the area indicated a solid square in (b). Image size is with .

Image of FIG. 4.
FIG. 4.

(a) Illustrations of the MOSN and the defective ones (MOSD1-MOSD3) with different disconnection positions. (b) The corresponding terahertz emission images. (c) The waveform of the terahertz emission measured by exciting the junctions indicated by a large circle in MOSN.

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/content/aip/journal/apl/94/19/10.1063/1.3133346
2009-05-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Backside observation of large-scale integrated circuits with multilayered interconnections using laser terahertz emission microscope
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3133346
10.1063/1.3133346
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