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Cross section of an LSI chip with multilevel interconnection lines.
Experimental setup of the near-infrared LTEM for backside observation of LSI chips.
(a) Laser reflection image and (b) terahertz emission image of an LSI chip with multilayered interconnections. The size of image in (a) and (b) is approximately with . (c) The waveforms of terahertz emission from areas A and B in (d) the magnified terahertz emission image of the area indicated a solid square in (b). Image size is with .
(a) Illustrations of the MOSN and the defective ones (MOSD1-MOSD3) with different disconnection positions. (b) The corresponding terahertz emission images. (c) The waveform of the terahertz emission measured by exciting the junctions indicated by a large circle in MOSN.
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