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Auger recombination rates in nitrides from first principles
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10.1063/1.3133359
/content/aip/journal/apl/94/19/10.1063/1.3133359
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3133359

Figures

Image of FIG. 1.
FIG. 1.

Auger coefficient for light holes as a function of fundamental band gap for a simulated InGaN alloy (see text) at and . The statistical error bars of the Monte Carlo integration are smaller than the symbols for all data points presented. Intraband Auger, which involves scattering of an electron to an unoccupied part of the lowest conduction band (left inset, dashed line), dominates in In-rich alloys. However, for alloy concentrations relevant for solid-state lighting, interband Auger recombination, which involves scattering to the second-lowest conduction band (right inset, solid line), is dominant.

Image of FIG. 2.
FIG. 2.

band structure for wurtzite AlN, GaN, and InN. For ease of comparison the valence bands have been aligned at the valence-band maximum (VBM) and the conduction bands at the CBM.

Tables

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Table I.

Band gap , gap between the first and the second conduction band at and crystal-field splitting calculated with the approach for AlN, GaN, and InN.

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/content/aip/journal/apl/94/19/10.1063/1.3133359
2009-05-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Auger recombination rates in nitrides from first principles
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3133359
10.1063/1.3133359
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