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Polarization sensitive silicon photodiodes using nanostructured metallic grids
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10.1063/1.3133862
/content/aip/journal/apl/94/19/10.1063/1.3133862
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3133862
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic of a WGP on a glass substrate and definitions used in this letter for the polarization state and the grid dimensions.

Image of FIG. 2.
FIG. 2.

Transmission spectra of long single apertures etched in a 310 nm gold film for widths varying between 100 and 200 nm.

Image of FIG. 3.
FIG. 3.

(a) Calculations of -polarized zero order transmission of wire grids ( and ) for period varying between 350 and 600 nm (c) and corresponding measurements. The inset in panel (c) is a SEM image of the wire grid with . (b) - and -polarized zero order transmission spectra (d) and the corresponding ER for , , and . Black solid curves: experiment; red dashed curves: calculation.

Image of FIG. 4.
FIG. 4.

(a) Intensity measured for - and -polarization on a pixel of a CMOS sensor without metal (black solid line and red dashed line, respectively) and with a wire grid with , , and (green dotted line and blue dashed dotted line, respectively). (b) Corresponding ER (black solid line) and calculated transmission of a thick layer on a silicon wafer.

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/content/aip/journal/apl/94/19/10.1063/1.3133862
2009-05-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization sensitive silicon photodiodes using nanostructured metallic grids
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/19/10.1063/1.3133862
10.1063/1.3133862
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