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(a) schematic diagram of an electrically tunable quantum dot device (the white dashed lines are the isopotential lines, and the electrons are depleted into the nanochannel below the injector); and (b) 3D FEM simulation of electron depletion into the nanochannel below the injector (n is the electron concentration and N is the average doping concentration of quantum well layers).
(a) Electron energy level of a single quantum well after lateral electron confinement with different gate voltages; and (b) typical wave functions calculated inside the quantum dot.
(a) The top view of the sample after generating a large area of uniform nanoholes perforated in Al layer and gate contact; and (b) the zoomed in view of the nanoholes perforated in Al layer.
(a) Side view of the nanoholes filled with Ti/Au top injector; and (b) the zoomed in view of a single quantum dot.
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