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Annealing effects on faceting of quantum dots
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10.1063/1.3056654
/content/aip/journal/apl/94/2/10.1063/1.3056654
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3056654
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM topographies for 1.7 ML QDs interface immediately quenched (a) and with a postgrowth annealing at (b), (c), and (d).

Image of FIG. 2.
FIG. 2.

(a) QD aspect ratio histograms after 1.7 ML of : interface immediately quenched (higher panel) after postgrowth annealing at (medium panel) and (lower panel). On the right of image, the schematic structure of QDs is shown. In the insets RHEED chevrons and facets determined by RHEED and AFM analyses are reported. (b) Scheme of a chevron structure. Chevron angle is the measured by intensity profiles. (c) Distance between chevrons as a function of (arbitrary origin). The measured angles for the sample immediately quenched and annealed at are reported.

Image of FIG. 3.
FIG. 3.

Left panel: QD aspect ratio vs volume for the interface immediately quenched (circles) with postgrowth annealing at (diamonds) and (crosses). Right panel: QD aspect ratio vs Volume at as a function of annealing time [ (squares), (triangles), and (circles)].

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/content/aip/journal/apl/94/2/10.1063/1.3056654
2009-01-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing effects on faceting of InAs∕GaAs(001) quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3056654
10.1063/1.3056654
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