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Thermoelectric power measurements of wide band gap semiconducting nanowires
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10.1063/1.3067868
/content/aip/journal/apl/94/2/10.1063/1.3067868
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3067868
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic layout and scanning electron microscopy image of a nanowire device for TEP measurements.

Image of FIG. 2.
FIG. 2.

(a) Typical characteristics of ZnO nanowire devices as a function of temperature. Symmetric and linear behavior down to 80 K and nonlinear behavior in the low-bias region below 80 K indicates the formation of low and narrow Schottky barriers near the contact regions. (b) TEP values of individual ZnO nanowires as a function of temperature. The solid line is a linear fit to zero with the slope of .

Image of FIG. 3.
FIG. 3.

TEP values of individual GaN nanowires as a function of temperature. The slope of the linear fit to zero is .

Image of FIG. 4.
FIG. 4.

Gate-dependent conductance characteristics of ZnO and GaN nanowire devices at room temperature. No appreciable gate dependence in conductance of GaN nanowire devices indicates high carrier concentration in the sample. The indicated carrier densities were estimated from TEP measurements.

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/content/aip/journal/apl/94/2/10.1063/1.3067868
2009-01-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric power measurements of wide band gap semiconducting nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3067868
10.1063/1.3067868
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