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Frequency and amplitude modulation in terahertz-sideband generation in quantum wells
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10.1063/1.3068494
/content/aip/journal/apl/94/2/10.1063/1.3068494
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3068494
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Extinction coefficient (solid) and propagation constant (dashed) of multiple layers of InGaAsP single QW at 1550 nm at 300 K as functions of dc bias field.

Image of FIG. 2.
FIG. 2.

Attenuated fundamental carrier signal power of the transmitted light (normalized to the input power) as a function of the dc bias field at three different modulating field strengths.

Image of FIG. 3.
FIG. 3.

(a) Overall sideband conversion efficiency (power normalized to the input power) as a function of the dc bias field at three different modulating field strengths and (b) the contributions to the overall sideband conversion by AM (dashed) and FM (solid) at .

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/content/aip/journal/apl/94/2/10.1063/1.3068494
2009-01-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Frequency and amplitude modulation in terahertz-sideband generation in quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3068494
10.1063/1.3068494
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