1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photodiode characteristics and band alignment parameters of epitaxial
Rent:
Rent this article for
USD
10.1063/1.3069282
/content/aip/journal/apl/94/2/10.1063/1.3069282
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3069282
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The structure of MBE sample grown on GaP substrate for the fabrication of photodiodes.

Image of FIG. 2.
FIG. 2.

The measured external QE of photodiodes in the wavelength range from 400 to 650 nm for three different photodiode structures. The insets show the three different structures. Diode (a) has structure with ring-shaped metal contact on top. Diode (b) has structure with a recess window etched in the top -GaP layer. Diode (c) has Schottky junction structure with very thin metal contact. The insets ignored the composition-grading layers at and interfaces.

Image of FIG. 3.
FIG. 3.

The forward bias characteristics of Schottky diodes made on -type (left panel) and -type (right panel) substrates. From the curves, the Schottky barrier heights were calculated to be 1.46 and 0.92 eV for junctions on - and -type substrates, respectively. The inset shows the band edge alignment diagram calculated from the characteristics.

Loading

Article metrics loading...

/content/aip/journal/apl/94/2/10.1063/1.3069282
2009-01-12
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/2/10.1063/1.3069282
10.1063/1.3069282
SEARCH_EXPAND_ITEM