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The structure of MBE sample grown on GaP substrate for the fabrication of photodiodes.
The measured external QE of photodiodes in the wavelength range from 400 to 650 nm for three different photodiode structures. The insets show the three different structures. Diode (a) has structure with ring-shaped metal contact on top. Diode (b) has structure with a recess window etched in the top -GaP layer. Diode (c) has Schottky junction structure with very thin metal contact. The insets ignored the composition-grading layers at and interfaces.
The forward bias characteristics of Schottky diodes made on -type (left panel) and -type (right panel) substrates. From the curves, the Schottky barrier heights were calculated to be 1.46 and 0.92 eV for junctions on - and -type substrates, respectively. The inset shows the band edge alignment diagram calculated from the characteristics.
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