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Structure of valence subbands in -plane grown GaInN QWs of different widths (3, 5, and 7 nm). In-plane hole dispersion along crystallographic -axis is indicated by solid lines. Dashed lines correspond to perpendicular in-plane direction of hole wave vector.
Effect of carrier injection on the radiative lifetime in QWs of different widths: 3 nm (solid), 4 nm (dashed), 5 nm (dash-dotted), and 7 nm (dotted line). The inset shows the TE peak gain degradation with increasing QW width. Here, injection level is and carrier temperature is 300 K (triangles) and 400 K (squares).
Comparison of temperature dependences of threshold concentration (upper plot) and threshold current density (lower plot) in nonpolar laser structures with different QW widths. Curve assignment as in Fig. 2.
Threshold QW carrier concentration (upper plot) and threshold current density (lower plot) as a function of QW width for two temperatures, 300 K (triangles) and 400 K (squares), and two levels of defect density, (solid lines) and (dashed lines).
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