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Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
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10.1063/1.3125252
/content/aip/journal/apl/94/20/10.1063/1.3125252
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3125252

Figures

Image of FIG. 1.
FIG. 1.

Measured dark current densities of 3 mm diameter and diodes.

Image of FIG. 2.
FIG. 2.

Band diagram of (top) and (bottom) Ge/Si heterojunctions. Interface states were not taken into account. is the distance from the surface.

Image of FIG. 3.
FIG. 3.

Measured external quantum efficiency of 3 mm diameter and diodes at 0 V bias. The inset shows the measured external quantum efficiency at 1550 nm of a 3 mm diameter diode as a function of bias.

Image of FIG. 4.
FIG. 4.

EBIC observation of (left) and (right) Ge/Si heterojunction photodiodes. The black region inside the top ring contact in the diode indicates poor collection of generated carriers, with a signal level comparable to noise. The EBIC image was taken with a VEGA Tescan at an acceleration voltage of 30 kV.

Tables

Generic image for table
Table I.

Summary of different growth techniques used to grow Ge layer for vertical incidence Ge/Si photodectors (presented in Table II ). Corresponding growth conditions, characteristics, and results of the grown layers are indicated. LT and HT stand for low and high temperatures, respectively, UHVCVD for ultra high vacuum chemical vapor deposition, MBE for molecular-beam epitaxy, RPCVD for reduced-pressure chemical vapor deposition, and CMP for chemical mechanical polishing. In the LEPECVD case the two growth temperatures correspond to the undoped Ge layer and highly doped top Ge layer growth temperatures, respectively.

Generic image for table
Table II.

Summary of low dark-current vertical incidence Ge/Si photodectors found in literature and whose growth conditions are presented in Table I . The dark current density is for an applied bias of −1 V.

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/content/aip/journal/apl/94/20/10.1063/1.3125252
2009-05-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3125252
10.1063/1.3125252
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