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Cross-sectional SEM images of pedestal nanorods on Si substrate. Inset: Top view.
Pedestal nanorods (-layer was grown at ) and conventional nanorods (-layer at ) (a) XRD in log scale, (b) CL spectra in log scale, and (c) CL images.
Depth-resolved CL spectra and XRD for the postgrowth annealed pedestal nanorods (a) CL with a 5 keV acceleration (mainly layer), the broad green luminescence was suppressed in a high-temperature annealing, (b) CL with a 10 keV acceleration (mainly InGaN layer); redshift of peak, 0.08 eV, and (c) XRD of the 500 and annealed samples.
characteristics of annealed pedestal nanorods at 500, 600, 700 and . Inset: equivalent circuit.
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