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pedestal nanorods: Effect of postgrowth annealing on the electrical performance
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10.1063/1.3129191
/content/aip/journal/apl/94/20/10.1063/1.3129191
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3129191
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM images of pedestal nanorods on Si substrate. Inset: Top view.

Image of FIG. 2.
FIG. 2.

Pedestal nanorods (-layer was grown at ) and conventional nanorods (-layer at ) (a) XRD in log scale, (b) CL spectra in log scale, and (c) CL images.

Image of FIG. 3.
FIG. 3.

Depth-resolved CL spectra and XRD for the postgrowth annealed pedestal nanorods (a) CL with a 5 keV acceleration (mainly layer), the broad green luminescence was suppressed in a high-temperature annealing, (b) CL with a 10 keV acceleration (mainly InGaN layer); redshift of peak, 0.08 eV, and (c) XRD of the 500 and annealed samples.

Image of FIG. 4.
FIG. 4.

characteristics of annealed pedestal nanorods at 500, 600, 700 and . Inset: equivalent circuit.

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/content/aip/journal/apl/94/20/10.1063/1.3129191
2009-05-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3129191
10.1063/1.3129191
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