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Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode
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10.1063/1.3139012
/content/aip/journal/apl/94/20/10.1063/1.3139012
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139012
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Spectral response of the MWIR absorber region at 77 K under −1.1 V reverse bias. Inset shows electronic bandstructure of the designed superlattice.

Image of FIG. 2.
FIG. 2.

Total current with illumination, dark-current, and corresponding multiplication gain vs applied reverse bias at 77 K.

Image of FIG. 3.
FIG. 3.

Excess noise factor vs multiplication gain characteristics. Symbols indicate measured values with solid curves representing calculated excess noise under the conventional local effect model for Ref. 10 with a fitted effective ratio, dashed line being the straight line fitted to the experimental data.

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/content/aip/journal/apl/94/20/10.1063/1.3139012
2009-05-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139012
10.1063/1.3139012
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