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Spectral response of the MWIR absorber region at 77 K under −1.1 V reverse bias. Inset shows electronic bandstructure of the designed superlattice.
Total current with illumination, dark-current, and corresponding multiplication gain vs applied reverse bias at 77 K.
Excess noise factor vs multiplication gain characteristics. Symbols indicate measured values with solid curves representing calculated excess noise under the conventional local effect model for Ref. 10 with a fitted effective ratio, dashed line being the straight line fitted to the experimental data.
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