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Highly temperature insensitive, deep-well emitting quantum cascade semiconductor lasers
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10.1063/1.3139069
/content/aip/journal/apl/94/20/10.1063/1.3139069
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139069
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated CB profile and key wave functions for (a) Conventional QC laser (Ref. 4) emitting at . (b) Deep-well QC laser under an electric field of 75 kV/cm . The upper lasing level is labeled as 4, while 5, 6, and 7 are upper energy levels in the active region. The band profile at the top of each figure corresponds to the valley.

Image of FIG. 2.
FIG. 2.

curves in pulsed (100 ns, 2 kHz) mode at various heatsink temperatures for uncoated, 3 mm long chips and of wide, ridge waveguide configuration. The threshold current density at is . Also shown is the curve at . The inset shows a typical lasing spectrum at RT near threshold.

Image of FIG. 3.
FIG. 3.

The threshold current density and the slope efficiency as a function of heatsink temperature. and are the characteristic temperature coefficients for and the slope efficiency, respectively.

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/content/aip/journal/apl/94/20/10.1063/1.3139069
2009-05-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139069
10.1063/1.3139069
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