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Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
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10.1063/1.3139079
/content/aip/journal/apl/94/20/10.1063/1.3139079
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139079
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Figures

Image of FIG. 1.
FIG. 1.

Transient transmission measurements carried out on the two different cap SQWs (a) sample A and (b) sample B. The excitation was set at 325 nm and the probing wavelength was selected to probe the population of the energy states within the QW at 410 nm. The inset displays room-temperature comparative PL for the two samples. (The transmission signal scales with the incident fluence.)

Image of FIG. 2.
FIG. 2.

Normalized transient transmission measurements at the lowest fluence for the two different samples plotted for comparison purposes. Clearly evident is the different single-exponential decay for the two samples.

Image of FIG. 3.
FIG. 3.

Transient transmission measurements carried out on the two different cap SQWs (a) sample A and (b) sample B. The excitation was set at 325 nm and the probing wavelength was selected to probe the population of the excited energy state within the QW at 385 nm. The inset in (b) shows the normalized differential transmission for the lowest fluence of sample A and B for comparison purposes.

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/content/aip/journal/apl/94/20/10.1063/1.3139079
2009-05-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139079
10.1063/1.3139079
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