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superlatticelike structure for lateral phase change memory
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10.1063/1.3139776
/content/aip/journal/apl/94/20/10.1063/1.3139776
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139776
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Top view, (b) side view, and (c) cross-section view of lateral PCM with SLL structure and ternary alloy phase diagram.

Image of FIG. 2.
FIG. 2.

(a) Program window of SLL lateral PCM as a function of Set pulse current varied with different thickness ratio. (b) Smallest Set and RESET currents of SLL lateral PCM dependence on thickness ratio. For both RESET and Set, the pulse width was fixed at 30 ns.

Image of FIG. 3.
FIG. 3.

(a) Endurance as a function of different thickness ratio with Set pulse 120 ns with current amplitude 0.38 mA and RESET pulse 30 ns with current amplitude 2.2 mA. (b) Endurance of lateral PCM with thickness ratio 1.6 with Set pulse 30 ns with current amplitude 1.16 mA and RESET pulse 30 ns with current amplitude 2.2 mA.

Image of FIG. 4.
FIG. 4.

Resistance dependent on temperature for different ratio of SLL structure. The exothermal measurement (ETTM) was carried out at the heating rate of .

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/content/aip/journal/apl/94/20/10.1063/1.3139776
2009-05-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3139776
10.1063/1.3139776
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