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Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films
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10.1063/1.3141520
/content/aip/journal/apl/94/20/10.1063/1.3141520
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3141520
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical setup of the QCL-based IR spectrometer.

Image of FIG. 2.
FIG. 2.

Silane absorbance and SNR at vs the input flow rate before igniting the plasma. The input flow rate and the total pressure in the PECVD reactor were maintained at 700 SCCM and 4.5 mbars, respectively.

Image of FIG. 3.
FIG. 3.

The band of acquired by a high-resolution FTIR (upper part of the figure; see Ref. 10), the Doppler-resolved R(9) multiplet of acquired by the QCL before and after igniting the plasma in the high-deposition-rate regime (right hand side of the inset), and weak unassigned absorption lines of that only appear in the spectrum acquired by the QCL (left hand side of the inset). For illustrative purposes, the spectrum of acquired after igniting the plasma is slightly shifted in the vertical axis.

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/content/aip/journal/apl/94/20/10.1063/1.3141520
2009-05-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/20/10.1063/1.3141520
10.1063/1.3141520
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