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(a) Diagram of device designed for direct measurement of the cross-plane of ErAs:InGaAlAs thin-film thermoelectric material. (b) Magnified optical image of patterned devices of different mesa areas.
Measured (solid lines) and calculated (dashed lines) thermal profiles along the long axis of devices of different areas for a sinusoidal current amplitude of 100 mA.
Summary of measured ErAs:InGaAlAs material parameters extracted from in-plane and cross-plane measurements at 300 K as well as the values used in the FEM simulation of the thermal profiles on the device metallization.
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