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(a) XRD scans of a silicon-capped, 22 nm thick (001)-oriented on (001) . Substrate peaks are marked with an asterisk . (b) A close-up of the 001 peak, showing thickness fringes. (c) RBS random and channeling spectra of an uncapped, 200 nm thick film on (001) with the simulated curve (dashed line). The simulated curve gives a thickness of 200 nm and a Eu:Ti ratio of 1:1.
(a) HAADF STEM image of the same film analyzed in Fig. 1(a). (b) Atomically sharp interface of the film and the substrate. (c) edges from XAS, showing the valence state of europium is .
Field-cooled magnetization of 8, 22, 50, 100, and 200 nm thick, uncapped films at , showing an antiferromagnetic ordering with . (inset) Field dependence of the magnetization for the same 200 nm thick film at 1.8 K.
(a) Dielectric function spectra of an uncapped, thick film on (001) over a spectral range from 0.75 to 6.5 eV. (b) Linear extrapolation of to determine the direct band gap.
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