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Time-resolved photoluminescence spectroscopy of the initial oxidation stage of small silicon nanocrystals
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10.1063/1.3141481
/content/aip/journal/apl/94/21/10.1063/1.3141481
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3141481
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Real-color photograph of the PL emission from the freshly prepared SiNCs layer under cw UV lamp as a function of the air-exposure duration (the arrow below the photograph).

Image of FIG. 2.
FIG. 2.

Time-resolved study on the spectral changes in the PL emission of SiNCs layer with the progressing oxidation in fast [(a), (c), (e), and (g)] and slow [(b), (d), (f), and (h)] detection regimes. Oxidation process starts at measurement time (H-terminated SiNCs) and is completed after approximately 750 s of exposure to oxygen dissolved in ethanol solution and UV pulsed irradiation (fully oxidized SiNCs). [(a) and (b)] Normalized PL spectra taken at (not oxidized) and (fully oxidized). [(c) and (d)] Normalized PL spectra evolution with progressing oxidation. [(e) and (f)] PL spectrum peak position. [(g) and (h)] PL spectrum area integrated from 400 to 700 nm. Temperature .

Image of FIG. 3.
FIG. 3.

Schematic model of the radiative recombination channels in small SiNC before (a) and after (b) oxidation. The transient regime (ps, fs) was studied previously in Ref. 12.

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/content/aip/journal/apl/94/21/10.1063/1.3141481
2009-05-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-resolved photoluminescence spectroscopy of the initial oxidation stage of small silicon nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3141481
10.1063/1.3141481
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