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Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
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10.1063/1.3142386
/content/aip/journal/apl/94/21/10.1063/1.3142386
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3142386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TRPL spectra of our polar InGaN/GaN quantum heterostructure under different electric field levels. The inset shows the carrier lifetime vs. applied electric field as a result of the TRPL analysis.

Image of FIG. 2.
FIG. 2.

Steady-state PL spectra of our polar InGaN/GaN quantum heterostructure under different electric field levels. The integrated PL intensity for the corresponding electric field level is presented in the inset.

Image of FIG. 3.
FIG. 3.

Normalized PL spectra of our polar InGaN/GaN quantum heterostructure under electric field. We observe a narrowing of the spectra along with a blueshift in the longer wavelength region, with a zoom-in presented in the inset for clarity.

Image of FIG. 4.
FIG. 4.

Relative radiative recombination lifetime extracted from TRPL and PL measurements. The inset shows energy band diagrams corresponding electron and hole ground state wave functions for the case of and externally applied electric field.

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/content/aip/journal/apl/94/21/10.1063/1.3142386
2009-05-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3142386
10.1063/1.3142386
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