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Growth of alloy nanowires in a separated -field by microwave processing
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10.1063/1.3143232
/content/aip/journal/apl/94/21/10.1063/1.3143232
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3143232
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic setup of a MW processing system using single mode cavity operating at 2.45 GHz.

Image of FIG. 2.
FIG. 2.

The XRD patterns of starting powder and 75SG10 nanowires.

Image of FIG. 3.
FIG. 3.

HRTEM picture of alloy (75SG10).

Image of FIG. 4.
FIG. 4.

SEM pictures of alloy samples (75SG5, 75SG2, and 75SG10).

Image of FIG. 5.
FIG. 5.

Si and Ge core level XPS spectra of alloy (75SG10).

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/content/aip/journal/apl/94/21/10.1063/1.3143232
2009-05-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of Si0.75Ge0.25 alloy nanowires in a separated H-field by microwave processing
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3143232
10.1063/1.3143232
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