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Metal-oxide-semiconductor field-effect-transistors on indium phosphide using and silicon passivation layer with equivalent oxide thickness of 18 Å
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10.1063/1.3143629
/content/aip/journal/apl/94/21/10.1063/1.3143629
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3143629
/content/aip/journal/apl/94/21/10.1063/1.3143629
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/content/aip/journal/apl/94/21/10.1063/1.3143629
2009-05-26
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3143629
10.1063/1.3143629
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