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double-heterostructure light-emitting diodes achieving electroluminescence of 0.4 mW at room temperature
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10.1063/1.3147168
/content/aip/journal/apl/94/21/10.1063/1.3147168
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3147168
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Figures

Image of FIG. 1.
FIG. 1.

(a) EL emission power with respect to injection current measured at RT for SFS DH LEDs with layer thicknesses of 80 nm, 200 nm, and . Typical example of temperature dependence of EL spectra for SFS DH LED was inserted. (b) RT EL spectrum at 400 mA and (c) vs plot for LED with a 200-nm-thick layer.

Image of FIG. 2.
FIG. 2.

Normalized temperature dependence of integrated PL intensity of emission from SFS DH with layer thicknesses of 80, 200, and 400 nm. PL spectrum measured at 77 K was inserted.

Image of FIG. 3.
FIG. 3.

Temperature dependence of (a) TR-PL decay curves for PL emission and (b) PL decay times for SFS DH.

Image of FIG. 4.
FIG. 4.

Temperature dependence of PL intensity ratio for SFS DH with layer thicknesses of 80, 200, and 400 nm. Normalized temperature dependence of integrated PL intensity of from these samples was inserted.

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/content/aip/journal/apl/94/21/10.1063/1.3147168
2009-05-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 μm electroluminescence of 0.4 mW at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3147168
10.1063/1.3147168
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