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double-heterostructure light-emitting diodes achieving electroluminescence of 0.4 mW at room temperature
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10.1063/1.3147168
/content/aip/journal/apl/94/21/10.1063/1.3147168
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3147168
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/content/aip/journal/apl/94/21/10.1063/1.3147168
2009-05-28
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 μm electroluminescence of 0.4 mW at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/21/10.1063/1.3147168
10.1063/1.3147168
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