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(a) High resolution SEM image (cross section) of an electrically contacted micropillar cavity. (b) Band diagram of a contacted micropillar under reverse bias illustrating the competition between carrier escape and radiative recombination as well as the mode mapping under resonant excitation.
(a) PC and micro-PL spectra (inset) of a device (incident power: ) showing very good agreement between the mode structure obtained from the micro-PL and the PC measurement. (b) PC measured for varying temperature with a fixed incident laser wavelength.
Peak photocurrent at resonance as well as the off-resonance BG signal of a device vs incident optical power. Inset: PC spectrum at an incident power of 80 nW.
(a) Normalized PC and PL emissions vs the applied electrical field for two different excitation wavelengths. The solid lines represent theoretical curves according to Eq. (2). (b) Carrier escape time calculated from Eq. (1) for different energies within the inhomogeneously broadened QD ensemble.
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