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High power efficiency in multilayer light emitting devices by bipolar direct tunneling
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10.1063/1.3147164
/content/aip/journal/apl/94/22/10.1063/1.3147164
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3147164
/content/aip/journal/apl/94/22/10.1063/1.3147164
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/content/aip/journal/apl/94/22/10.1063/1.3147164
2009-06-04
2014-12-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3147164
10.1063/1.3147164
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