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AFM over a area of a) a typical GaSb surface on GaAs, rms and b) a thick MWIR superlattice on the GaSb/GaAs template, rms .
(a) characteristics of the sample as a function of temperatures, dotted lines are modeled values and (b) vs relation shows three distinct regimes with different dominant mechanisms: diffusion, generation-recombination, and defect-related leakage.
Quantum efficiency spectrums of the devices at different temperatures. Solid lines indicate measurements at 0 mV and dashed line indicate measurements with applied reverse bias. The inset is the temperature dependent quantum efficiency at at different reverse bias.
Calculated Johnson-noise limited detectivity at zero bias of the device at different temperatures. The BLIP of a 300 K background is indicated as a dashed line. The BLIP operating temperature of the device is .
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