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Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
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10.1063/1.3148326
/content/aip/journal/apl/94/22/10.1063/1.3148326
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148326
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM over a area of a) a typical GaSb surface on GaAs, rms and b) a thick MWIR superlattice on the GaSb/GaAs template, rms .

Image of FIG. 2.
FIG. 2.

(a) characteristics of the sample as a function of temperatures, dotted lines are modeled values and (b) vs relation shows three distinct regimes with different dominant mechanisms: diffusion, generation-recombination, and defect-related leakage.

Image of FIG. 3.
FIG. 3.

Quantum efficiency spectrums of the devices at different temperatures. Solid lines indicate measurements at 0 mV and dashed line indicate measurements with applied reverse bias. The inset is the temperature dependent quantum efficiency at at different reverse bias.

Image of FIG. 4.
FIG. 4.

Calculated Johnson-noise limited detectivity at zero bias of the device at different temperatures. The BLIP of a 300 K background is indicated as a dashed line. The BLIP operating temperature of the device is .

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/content/aip/journal/apl/94/22/10.1063/1.3148326
2009-06-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148326
10.1063/1.3148326
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