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Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin interlayer
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10.1063/1.3148328
/content/aip/journal/apl/94/22/10.1063/1.3148328
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148328
/content/aip/journal/apl/94/22/10.1063/1.3148328
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/content/aip/journal/apl/94/22/10.1063/1.3148328
2009-06-01
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148328
10.1063/1.3148328
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