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Enhanced hole injection in organic light-emitting devices by using as an anodic buffer layer
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1.
1.A. Köhler, J. S. Wilson, and R. H. Friend, Adv. Mater. (Weinheim, Ger.) 14, 701 (2002).
http://dx.doi.org/10.1002/1521-4095(20020517)14:10<701::AID-ADMA701>3.0.CO;2-4
2.
2.B. W. D’Andrade and S. R. Forrest, Adv. Mater. (Weinheim, Ger.) 16, 1585 (2004).
http://dx.doi.org/10.1002/adma.200400684
3.
3.J. Feng, T. Okamoto, R. Naraoka, and S. Kawata, Appl. Phys. Lett. 93, 051106 (2008).
http://dx.doi.org/10.1063/1.2968309
4.
4.H. Aziz, Y. Luo, G. Xu, and Z. D. Popovic, Appl. Phys. Lett. 89, 103515 (2006).
http://dx.doi.org/10.1063/1.2345242
5.
5.Y. L. Shen, D. B. Jacobs, G. G. Malliaras, G. Koley, M. G. Spencer, and R. Ioannidis, Adv. Mater. (Weinheim, Ger.) 13, 1234 (2001).
http://dx.doi.org/10.1002/1521-4095(200108)13:16<1234::AID-ADMA1234>3.0.CO;2-R
6.
6.L. S. Hung, C. W. Tang, M. G. Mason, P. Raychaudhuri, and J. Madathil, Appl. Phys. Lett. 78, 544 (2001).
http://dx.doi.org/10.1063/1.1327273
7.
7.M. Y. Chan, S. L. Lai, M. K. Fung, C. S. Lee, and S. T. Lee, J. Appl. Phys. 95, 5397 (2004).
http://dx.doi.org/10.1063/1.1707201
8.
8.J. Wu, J. Hou, Y. Cheng, Z. Xie, and L. Wang, Semicond. Sci. Technol. 22, 824 (2007).
http://dx.doi.org/10.1088/0268-1242/22/7/027
9.
9.H. You, Y. Dai, Z. Zhang, and D. Ma, J. Appl. Phys. 101, 026105 (2007).
http://dx.doi.org/10.1063/1.2430511
10.
10.J. Meyer, S. Hamwi, T. Bülow, H. H. Johannes, T. Riedl, and W. Kowalsky, Appl. Phys. Lett. 91, 113506 (2007).
http://dx.doi.org/10.1063/1.2784176
11.
11.W. Hu and M. Matsumura, Appl. Phys. Lett. 81, 806 (2002).
http://dx.doi.org/10.1063/1.1497441
12.
12.I. M. Chan and F. C. Hong, Thin Solid Films 450, 304 (2004).
http://dx.doi.org/10.1016/j.tsf.2003.10.022
13.
13.K. J. Kim, D. W. Moon, S. K. Lee, and K. H. Jung, Thin Solid Films 360, 118 (2000).
http://dx.doi.org/10.1016/S0040-6090(99)00562-3
14.
14.G. Xie, Y. Meng, F. Wu, C. Tao, D. Zhang, M. Liu, Q. Xue, W. Chen, and Y. Zhao, Appl. Phys. Lett. 92, 093305 (2008).
http://dx.doi.org/10.1063/1.2890490
15.
15.F. Wang, X. Qiao, T. Xiong, and D. Ma, Org. Electron. 9, 985 (2008).
http://dx.doi.org/10.1016/j.orgel.2008.07.009
16.
16.T. Matsushima, Y. Kinoshita, and H. Murata, Appl. Phys. Lett. 91, 253504 (2007).
http://dx.doi.org/10.1063/1.2825275
17.
17.H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. (Weinheim, Ger.) 11, 605 (1999).
http://dx.doi.org/10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q
18.
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Figures

Image of FIG. 1.

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FIG. 1.

XPS Fe core-level spectrum of the film with those from and powders as reference.

Image of FIG. 2.

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FIG. 2.

Emission performance. (a) Current density-voltage and (b) luminance-voltage characteristics of devices with various thicknesses of anodic buffer layer.

Image of FIG. 3.

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FIG. 3.

Interfacial characteristics. (a) The measured UPS spectra of the HOMO region and the cutoff region (inset) of the (1 nm)/NPB (15 nm) (dash), ITO/NPB (1 nm) (dot), and bare ITO (solid). (b) XPS spectra of ITO (solid) and ITO/NPB (1 nm) (dash) films.

Image of FIG. 4.

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FIG. 4.

AFM images of the (a) bare and (b) the 1 nm modified ITO anodes.

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/content/aip/journal/apl/94/22/10.1063/1.3148657
2009-06-02
2014-04-21

Abstract

Hole injection improvement in organic light-emitting devices with as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the thin film between the ITO and hole-transporting layer.

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Scitation: Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148657
10.1063/1.3148657
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