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(a) Schematic diagram of the device structure. (b) The curve for our VCSEL with a surface microstructure. The inset shows the top-view SEM image, with the geometric diameters and .
Near field intensity distributions on the surface of aperture of our microstructured VCSEL at different injection currents, i.e., (a) 3.5 mA, (c) 17 mA, (e) 19 mA, (f) 19 mA (defocus), (g) 24 mA, and (h) 30 mA. The schematic mismatched lateral boundary defined by the surface and the oxide layer is shown in (b). And the illustration of two lasing modes are shown in (d), with blue and red colors corresponding to the WGM and DLM, respectively.
Simulations of the field distribution for the eigenmodes as a WGM (a) and a DLM (b), respectively. Superpositions between these WGM and DLM are shown with different relative phases for (c) , (d) , and (e) 0. (f) Experimental data for a clearly symmetry-breaking near field intensity distribution collecting at the injection current 7.5 mA.
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