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(a) SEM of 40 nm thick silicon cantilevers (the scale bar is ). (b) Schematic view of the measurement setup. The driving voltage on the cantilever was applied through a probe contact and the substrate was grounded.
A typical measurement result of an array of cantilevers with the same thickness. The pull-in points were fitted using the GDQ algorithm (solid line). Insets [(a)–(c)] show the response of a cantilever to the slowly increasing voltage up to the pull-in point (c).
The size dependence of the . The blue circles represent the for an array of cantilevers, extracted from fitted results, similar to the one presented in Fig. 2. The dashed line is the bulk values for silicon . The solid line is the calculated through Eq. (3).
Repeated measurements on various cantilevers. The measurements have been carried out continuously.
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