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Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability
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10.1063/1.3148774
/content/aip/journal/apl/94/22/10.1063/1.3148774
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148774
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM of 40 nm thick silicon cantilevers (the scale bar is ). (b) Schematic view of the measurement setup. The driving voltage on the cantilever was applied through a probe contact and the substrate was grounded.

Image of FIG. 2.
FIG. 2.

A typical measurement result of an array of cantilevers with the same thickness. The pull-in points were fitted using the GDQ algorithm (solid line). Insets [(a)–(c)] show the response of a cantilever to the slowly increasing voltage up to the pull-in point (c).

Image of FIG. 3.
FIG. 3.

The size dependence of the . The blue circles represent the for an array of cantilevers, extracted from fitted results, similar to the one presented in Fig. 2. The dashed line is the bulk values for silicon [2]. The solid line is the calculated through Eq. (3).

Image of FIG. 4.
FIG. 4.

Repeated measurements on various cantilevers. The measurements have been carried out continuously.

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/content/aip/journal/apl/94/22/10.1063/1.3148774
2009-06-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3148774
10.1063/1.3148774
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