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InN nanocolumns grown by plasma-assisted molecular beam epitaxy on -plane GaN templates
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM image of InN NCs grown on -plane GaN, showing faceted - and -plane topsides. The inset shows the -plane base rectangular geometry. (b) SEM image of the InN NCs grown directly on -plane GaN templates.

Image of FIG. 2.
FIG. 2.

(a) SAED pattern taken along the zone axis revealing two different diffraction patterns corresponding to the GaN template (circles) and the InN NCs (squares), respectively. (b) Cross-sectional HRTEM image revealing an atomically flat and abrupt interface between the InN NCs and the -plane GaN template. A lower magnification TEM image of the NCs is shown in the inset. No InN compact epilayer is formed between the GaN template and the NCs.

Image of FIG. 3.
FIG. 3.

mode intensity variation as a function of the polarization angle. The dots represent the InN NCs grown along the axis, the squares correspond to the InN NCs grown on -plane GaN templates and the stars to the -plane GaN template.

Image of FIG. 4.
FIG. 4.

PL spectra of InN nanocolumns grown on -plane GaN templates as a function of temperature.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates