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Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with and gate dielectrics
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10.1063/1.3151865
/content/aip/journal/apl/94/22/10.1063/1.3151865
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3151865
/content/aip/journal/apl/94/22/10.1063/1.3151865
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/content/aip/journal/apl/94/22/10.1063/1.3151865
2009-06-05
2014-12-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/22/10.1063/1.3151865
10.1063/1.3151865
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