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(a) Schematic representation of a higher order AlN contour-mode resonator. The device is formed by a parallel combination of mechanically coupled width-extensional resonant elements ( in this case). The width sets the resonance frequency, whereas and are employed to define the device impedance (see Ref. 4). (b) Simulation of the characteristic mode of vibration of the AlN resonator. The inset shows the displacement and velocity distribution along the width of each subresonator. (c) SEM image of the ss-DNA decorated nanotube functionalization layer grown on the top surface of the resonator.
Response to DNT (a) and DMMP (b) of a 450 MHz AlN contour-mode resonator with and without DNA seq.1 functionalization. The results prove that the DNA sequence1 enhances the device sensitivity. The response to 10% and 25% DNT shows different patterns depending on the number of injections. This result is repeatable, but its physics is still under investigation. The two insets show the measured frequency shift as a function of the analyte concentration.
Comparison between DNT and DMMP response with different ss-DNA functionalization sequences for 10% analyte concentration. The chart shows the enhanced mass adsorption occurred because of the functionalization process and the ability to selectively distinguish between DNT and DMMP.
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